Latest developments of the spin-valve transistor
نویسندگان
چکیده
منابع مشابه
Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor.
A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (CoyCu) 4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor str...
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ژورنال
عنوان ژورنال: Journal of Magnetism and Magnetic Materials
سال: 1997
ISSN: 0304-8853
DOI: 10.1016/s0304-8853(97)00594-5